ION-IMPLANTED N-TYPE RESISTORS ON HIGH-RESISTIVITY SUBSTRATES

被引：3
|
作者：
HANSON, JW [1 ]
HUBER, RJ [1 ]
FORDEMWALT, JN [1 ]
机构：
[1] UNIV UTAH, INST BIOMED ENGN, SALT LAKE CITY, UT 84112 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1973年 / 10卷 / 06期
关键词：
D O I：
10.1116/1.1318521
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：944 / 947
页数：4
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