High-resistivity n-type silicon prepared by Czochralski growth and untraditional doping

The potentialities of two methods of preparing high-resistivity (rho = 40-150 Omega cm) n-Si based on the Czochralski technique are examined. In these methods, thermal donors are generated in undoped or phosphorus-doped Czochralski-grown Si held at 350-500 degrees C at the latest stages of the fabrication of semiconductor devices. The conditions for obtaining untraditionally doped silicon during the fabrication of high-power semiconductor devices (transistors, diods, and thyristors) are outlined.