CONDITIONS FOR GENERATION OF MICROWAVE-RADIATION IN HIGH-RESISTIVITY COMPENSATED P-TYPE INSB

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作者：
KARTSIVADZE, GA
MIRIANASHVILI, SM
NANOBASHVILI, DI
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 07期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：836 / 837
页数：2
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