CONDITIONS FOR GENERATION OF MICROWAVE-RADIATION IN HIGH-RESISTIVITY COMPENSATED P-TYPE INSB

被引：0

作者：

KARTSIVADZE, GA

MIRIANASHVILI, SM

NANOBASHVILI, DI

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来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 07期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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引用

页码：836 / 837

页数：2

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