THE EFFECT OF TRENCH-GATE OXIDE STRUCTURE ON EPROM DEVICE OPERATION

被引：2
|
作者：
CHU, SSD
STECKL, AJ
机构：
[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180
[2] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 06期
关键词：
D O I：
10.1109/55.718
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：284 / 286
页数：3
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