THE EFFECT OF TRENCH-GATE OXIDE STRUCTURE ON EPROM DEVICE OPERATION

被引：2
|
作者：
CHU, SSD
STECKL, AJ
机构：
[1] RENSSELAER POLYTECH INST,DEPT ELECT COMP & SYST ENGN,TROY,NY 12180
[2] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 06期
关键词：
D O I：
10.1109/55.718
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：284 / 286
页数：3
相关论文
共 50 条
  • [31] A new lateral trench-gate conductivity modulated power transistor
    Cai, J
    Sin, JKO
    Mok, PKT
    Ng, WT
    Lai, PPT
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) : 1788 - 1793
  • [32] Fast Switching β-Ga2O3 Power MOSFET With a Trench-Gate Structure
    Dong, Hang
    Long, Shibing
    Sun, Haiding
    Zhao, Xiaolong
    He, Qiming
    Qin, Yuan
    Jian, Guangzhong
    Zhou, Xuanze
    Yu, Yangtong
    Guo, Wei
    Xiong, Wenhao
    Hao, Weibing
    Zhang, Ying
    Xue, Huiwen
    Xiang, Xueqiang
    Yu, Zhaoan
    Lv, Hangbing
    Liu, Qi
    Liu, Ming
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (09) : 1385 - 1388
  • [33] Ultrathin Vertical Gate Oxide for Trench Power Device Technology
    Lee, Shin Phay
    Khor, C. W.
    Ngwan, V. C.
    6TH IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2022), 2022, : 30 - 32
  • [34] Analysis and Manufacturing of GaN Trench-Gate MOSFETs with Thick Bottom Dielectric
    Hao, Chunfeng
    Zhou, Jiaan
    Yu, Guohao
    Ding, Liying
    Li, Yu
    Guo, Bohan
    Yang, An
    Xing, Runxian
    Liu, Bosen
    Yue, Huixin
    Jiang, Jinxia
    Huang, Rong
    Zeng, Zhongming
    Zhang, Baoshun
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2024,
  • [35] Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs
    Lu, L.
    Chen, Z.
    Bryant, A.
    Santi, E.
    Hudgins, J. L.
    Palmer, P. R.
    CONFERENCE RECORD OF THE 2007 IEEE INDUSTRY APPLICATIONS CONFERENCE FORTY-SECOND IAS ANNUAL MEETING, VOLS. 1-5, 2007, : 342 - +
  • [36] Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs
    Lu, Liqing
    Chen, Zhiyang
    Bryant, Angus
    Hudgins, Jerry L.
    Palmer, Patrick R.
    Santi, Enrico
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2010, 46 (02) : 875 - 883
  • [37] Achieving Vertical Trench-Gate GaN MOSFETs Via Process Optimization
    Shahin, D. I.
    Anderson, T. J.
    Christou, A.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7, 2017, 80 (07): : 139 - 145
  • [38] 4H-SiC Trench-gate MOSFET with JTE termination
    Zhu, Zhengyun
    Ren, Na
    Xu, Hongyi
    Liu, Li
    Sheng, Kuang
    2022 19TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2022 8TH INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS, SSLCHINA: IFWS, 2022, : 4 - 7
  • [39] Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
    Iizuka, Takahiro
    Fukushima, Kenji
    Tanaka, Akihiro
    Kikuchihara, Hideyuki
    Miyake, Masataka
    Mattausch, Hans J.
    Miura-Mattausch, Mitiko
    IEICE TRANSACTIONS ON ELECTRONICS, 2013, E96C (05): : 744 - 751
  • [40] Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
    Iizuka, T.
    Fukushima, K.
    Tanaka, A.
    Ueno, M.
    Miura-Mattausch, M.
    NANOTECHNOLOGY 2012, VOL 2: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, 2012, : 748 - 751
12345