FORMATION OF HEAVILY DOPED N-TYPE LAYERS IN GAAS BY MULTIPLE ION-IMPLANTATION

被引：10
|
作者：
STONEHAM, EB
PATTERSON, GA
GLADSTONE, JM
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 02期
关键词：
D O I：
10.1007/BF02670855
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：371 / 383
页数：13
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