LOW-DOSE N-TYPE ION-IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES

被引：31

作者：

DONNELLY, JP ^{[1
]}

BOZLER, CO ^{[1
]}

LINDLEY, WT ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 03期

关键词：

D O I：

10.1016/0038-1101(77)90198-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：273 / 276

页数：4

共 50 条

[1] STRAIN IN GAAS BY LOW-DOSE ION-IMPLANTATION
PAINE, BM
HURVITZ, NN
SPERIOSU, VS
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1335 - 1339
[2] ION-IMPLANTATION INTO A CR-DOPED SEMI-INSULATING GAAS SUBSTRATE
NISHI, H
OKAMURA, S
INADA, T
HASHIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 223 - 228
[3] NEGATIVE MAGNETORESISTANCE IN CR-DOPED N-TYPE GAAS
PODOR, B
[J]. PHYSICA STATUS SOLIDI, 1969, 31 (01): : K55 - &
[4] FORMATION OF HEAVILY DOPED N-TYPE LAYERS IN GAAS BY MULTIPLE ION-IMPLANTATION
STONEHAM, EB
PATTERSON, GA
GLADSTONE, JM
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (02) : 371 - 383
[5] FORMATION OF HEAVILY DOPED N-TYPE LAYERS IN GAAS BY MULTIPLE ION-IMPLANTATION
STONEHAM, EB
PATTERSON, GA
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[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 143 - 147
[6] MONITORING OF DOSE IN LOW-DOSE ION-IMPLANTATION
HARA, T
HAGIWARA, H
ICHIKAWA, R
SMITH, WL
WELLES, C
HAHN, SK
LARSON, L
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 250 - 252
[7] COMPENSATION IN N-TYPE GAAS RESULTING FROM NITROGEN ION-IMPLANTATION
DUNCAN, WM
MATTESON, S
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1059 - 1062
[8] INJECTION DEPENDENCE OF EXCESS CARRIER LIFETIMES IN CR-DOPED N-TYPE GAAS
HUANG, CI
LI, SS
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) : 4214 - 4215
[9] LOW-DOSE SI ION-IMPLANTATION INTO SEMI-INSULATING LEC GAAS
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HONDA, T
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[J]. ELECTRONICS LETTERS, 1981, 17 (21) : 817 - 819
[10] MONITORING OF LOW-DOSE ION-IMPLANTATION IN SILICON
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ICHIKAWA, R
NAKASHIMA, S
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LARSON, L
[J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (11) : 485 - 486

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