OXYGEN ION-IMPLANTATION INTO BOTH HEAVILY DOPED N+-GAAS AND P+-GAAS FOR ISOLATION

Oxygen ion implantation into GaAs has been investigated as a function of ion dose (10(13) -4 x 10(15)/cm2) and post-implantation annealing temperature (100-700-degrees-C). Singly and doubly ionized oxygen atoms are implanted into both heavily doped n+ (Sn-doped, 1 x 10(19)/cm3)- and p+ (Be-doped, 2 x 10(19)/cm3)-GaAs. The isolation regions with high resistivity of 10(8)-10(9) OMEGA/open-square-box are completely formed in both n+- and p+-GaAs by implantation at a dose range of 10(15)/cm2 followed by annealing at 500 to 550-degrees-C for 10 min. The initial high resistivity in the n+- and p+-GaAs remains stable for more than 4000 h in a 200-degrees-C atmosphere. It is found that the compensation center levels, which are more or less induced by implantation damage, remain stable over long-term aging. It was also found that diffusion of implanted oxygen atoms was very small and hardly detectable by SIMS analysis in the samples annealed at less than 700-degrees-C.