N-TYPE DOPING OF INP BY ION-IMPLANTATION

被引：4
|
作者：
SUSSMANN, RS
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 03期
关键词：
D O I：
10.1007/BF02650867
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：603 / 617
页数：15
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