PARA-TYPE MODULATION-DOPED ALGAAS/GAAS HETEROSTRUCTURES GROWN BY ATMOSPHERIC-PRESSURE METAL ORGANIC VAPOR-PHASE EPITAXY (MOVPE)

被引：3

作者：

ROBERTS, JS ^{[1
]}

WOODHEAD, J ^{[1
]}

MISTRY, P ^{[1
]}

SINGH, KC ^{[1
]}

SOTOMAYORTORRES, CM ^{[1
]}

机构：

[1] UNIV ST ANDREWS,DEPT PHYS,ST ANDREWS KY16 9SS,FIFE,SCOTLAND

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 11期

关键词：

D O I：

10.1049/el:19870433

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：605 / 606

页数：2

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