ATMOSPHERIC-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY GROWTH OF HIGH-MOBILITY GAAS USING TRIMETHYLGALLIUM AND ARSINE

被引：4
|
作者：
HANNA, MC
LU, ZH
OH, EG
MAO, E
MAJERFELD, A
机构：
[1] Department of Electrical and Computer Engineering, University of Colorado, Boulder
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 11期
关键词：
D O I：
10.1063/1.103509
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial layers of GaAs with peak mobilities as high as 200 000 cm 2/V s at 50 K have been grown in an atmospheric pressure organometallic vapor phase epitaxy reactor using trimethylgallium (TMG) and arsine. The growth conditions which lead to high-mobility GaAs are described in this letter. Low-temperature photoluminescence and temperature-dependent Hall measurements are used to study the dependence of the incorporation of residual impurities on the growth temperature and arsine partial pressure. Carbon acceptor densities <1014 cm-3 were measured in the highest purity samples.
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页码：1120 / 1122
页数：3
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