PARA-TYPE MODULATION-DOPED ALGAAS/GAAS HETEROSTRUCTURES GROWN BY ATMOSPHERIC-PRESSURE METAL ORGANIC VAPOR-PHASE EPITAXY (MOVPE)

被引：3
|
作者：
ROBERTS, JS [1 ]
WOODHEAD, J [1 ]
MISTRY, P [1 ]
SINGH, KC [1 ]
SOTOMAYORTORRES, CM [1 ]
机构：
[1] UNIV ST ANDREWS,DEPT PHYS,ST ANDREWS KY16 9SS,FIFE,SCOTLAND
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 11期
关键词：
D O I：
10.1049/el:19870433
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：605 / 606
页数：2
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