PHOTOLUMINESCENCE FROM MODULATION-DOPED ALGAAS LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY-GROWN GAAS HETEROSTRUCTURES

被引：2
|
作者：
SCHULTE, D
SUBRAMANIAN, S
UNGIER, L
ARTHUR, JR
机构：
[1] Department of Electrical and Computer Engineering, Center for Advanced Materials Research, Oregon State University, Corvallis
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 02期
关键词：
D O I：
10.1063/1.360359
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photoluminescence (PL) results from a novel modulation doped AlGaAs/ low-temperature molecular beam epitaxially-grown-GaAs (LT-GaAs MODFET) heterostructure are reported. A new PL line at 1.65 eV is consistently observed in all the LT-GaAs MODFET structures investigated. A spatially indirect transition from a two-dimensional electron gas at the heterojunction interface to the holes in AlGaAs is believed to be responsible for the observed 1.65 eV PL line. LT-GaAs MODFET structures in which LT-GaAs region is grown at 350°C show additional lines lying in the band edge region as well as deep inside the band gap region of LT-GaAs. © 1995 American Institute of Physics.
引用
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页码：1210 / 1213
页数：4
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