Highly p-type carbon-doped InGaAs grown by atmospheric pressure organometallic vapor-phase epitaxy

Carbon doped, p-type, InxGa1-xAs (0.2 < x < 0.65) epilayers have been grown on InP substrates at relatively low temperature (450 degrees C) using atmospheric pressure organometallic vapor-phase epitaxy (APOMVPE). Excellent morphology was obtained in all cases. After growth van der Pauw-Hall measurements revealed high hole concentrations in the range 8.5 x 10(18)-8.7 x 10(19) cm(-3) (highest reported to date for APOMVPE). The effects of growth temperature, V/III ratio and CCl4 partial pressure on the carrier concentration and mobility are reported. X-ray diffraction reveals excellent crystal quality. Annealing the samples in different ambients at 400-500 degrees C caused no significant variation in the carrier concentration or mobility, i.e. minimal dopant ion passivation was measured. However, reversible hole compensation was measured after annealing at 650 degrees C. This suggests that macroscopic defects probably are associated with carrier compensation. (C) 1998 Elsevier Science B.V. All rights reserved.