Heavily carbon-doped P-type InGaAs grown by metalorganic molecular beam epitaxy

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[1] Akatsuka, Takeshi
[2] Miyake, Ryuji
[3] Nozaki, Shinji
[4] Yamada, Takumi
[5] Konagai, Makoto
[6] Takahashi, Kiyoshi
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Akatsuka, Takeshi | 1600年 / 30期
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