HEAVILY CARBON-DOPED P-TYPE INGAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：5
|
作者：
AKATSUKA, T
MIYAKE, R
NOZAKI, S
YAMADA, T
KONAGAI, M
TAKAHASHI, K
机构：
[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 04期
关键词：
Bandgap narrowing; Carbon; Heavy doping; Lattice match; MOMBE; P-type lnGaAs; Raman;
D O I：
10.1143/JJAP.29.L537
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In order to overcome a problem of the lattice mismatch between heavily carbon-doped p-GaAs and moderately doped GaAs, we have grown heavily carbon-doped InGaAs with a hole concentration of 2.6×1020cm-3and resistivity of 6.5×10-4Ω·cm by MOMBE, in which the indium content was adjusted so that its lattice constant became equal to that of SI GaAs. In the lattice-matched InGaAs, the indium molar fraction determined from the Raman spectrum and the bandgap from the 4.2 K photoluminescence spectrum are 0.05 and 1.396 eV, respectively. © 1990 IOP Publishing Ltd.
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收藏
页码：L537 / L539
页数：3
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