HEAVILY CARBON-DOPED P-TYPE (IN)GAAS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING DIIODOMETHANE

被引：1
|
作者：
TOMIOKA, T
OKAMOTO, N
ANDO, H
YAMAURA, S
FUJII, T
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(94)00889-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Heavily carbon-doped p-type InxGa1-xAs (0 less than or equal to x < 0.49) was successfully grown by gas-source molecular beam epitaxy using diiodomethane (CH2I2), triethylindium (TEIn), triethylgallium (TEGa) and AsH3. Hole concentrations as high as 2.1 X 10(20) cm(-3) were achieved in GaAs at an electrical activation efficiency of 100%. For InxGa1-xAs, both the hole and the atomic carbon concentrations gradually decreased as the InAs mole fraction, x, increased from 0.41 to 0.49. Hole concentrations of 5.1 X 10(18) and 1.5 X 10(19) cm(-3) for x = 0.49 and x = 0.41, respectively, were obtained by a preliminary experiment. After post-growth annealing (500 degrees C, 5 min under As, pressure), the hole concentration increased to 6.2 X 10(18) cm(-3) for x = 0.49, probably due to the activation of hydrogen-passivated carbon accepters.
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页码：221 / 226
页数：6
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