CHARACTERISTICS OF BIPOLAR-TRANSISTORS WITH VARIOUS DEPTHS OF N+ BURIED LAYERS FORMED BY HIGH-ENERGY ION-IMPLANTATION

被引：5
|
作者：
TAMBA, A [1 ]
KOBAYASHI, Y [1 ]
SUZUKI, T [1 ]
NATSUAKI, N [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 2A期
关键词：
HIGH-ENERGY ION IMPLANTATION (HEI2); BIPOLAR TRANSISTOR; N+ BURIED LAYER; BREAKDOWN VOLTAGE; LEAKAGE CURRENT; BICMOS;
D O I：
10.1143/JJAP.31.156
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Bipolar transistors having n+ buried layers of various depths formed by high-energy ion implantation are investigated in order to obtain bipolar transistor of various performances in a single chip. The breakdown voltage between the emitter and the collector (BV(CEO)) values are controlled and decreased with increasing oxide thickness with high-energy ion implantation in Si dioxide films of varying thicknesses. The maximum BV(CEO) value obtained is 7.8 V. Base-collector leakage currents are very small when secondary defects are contained within the n+ buried layer. This method should be very effective for designing both BiCMOS and multifunction LSIs.
引用
收藏
页码：156 / 160
页数：5
相关论文
共 50 条
  • [41] VARIABLE-ENERGY RF QUADRUPOLE FOR HIGH-ENERGY ION-IMPLANTATION
    ITO, J
    TOKIGUCHI, K
    AMEMIYA, K
    SAKUDO, N
    YAMADA, S
    HIRAO, Y
    TOKUDA, N
    [J]. SURFACE & COATINGS TECHNOLOGY, 1994, 66 (1-3): : 364 - 367
  • [42] HIGH-ENERGY ION-IMPLANTATION FOR ULSI - WELL ENGINEERING AND GETTERING
    TSUKAMOTO, K
    KUROI, T
    KOMORI, S
    AKASAKA, Y
    [J]. SOLID STATE TECHNOLOGY, 1992, 35 (06) : 49 - 55
  • [43] HIGH-ENERGY ION-IMPLANTATION FOR ELECTRICAL ISOLATION OF MICROELECTRONIC DEVICES
    RIDGWAY, MC
    ELLINGBOE, SL
    ELLIMAN, RG
    WILLIAMS, JS
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 89 (1-4): : 290 - 297
  • [44] CALCULATION OF THE DEPTH PROFILES ASSOCIATED WITH HIGH-ENERGY ION-IMPLANTATION
    BURENKOV, AF
    KOMAROV, FF
    [J]. VACUUM, 1991, 42 (1-2) : 13 - 15
  • [45] TEMPERATURE COMPENSATED PIEZORESISTER FABRICATED BY HIGH-ENERGY ION-IMPLANTATION
    NISHIMOTO, T
    SHOJI, S
    MINAMI, K
    ESASHI, M
    [J]. IEICE TRANSACTIONS ON ELECTRONICS, 1995, E78C (02) : 152 - 156
  • [46] HIGH-ENERGY ION-IMPLANTATION INTO SILICON - AN APPLICATION IN CMOS TECHNOLOGY
    GROUILLET, A
    [J]. VACUUM, 1989, 39 (2-4) : 163 - 167
  • [47] EFFECTS OF HIGH-ENERGY (MEV) ION-IMPLANTATION OF POLYESTER FILMS
    UENO, K
    MATSUMOTO, Y
    NISHIMIYA, N
    NOSHIRO, M
    SATOU, M
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 1263 - 1266
  • [48] DAMAGE FORMATION AND ANNEALING OF HIGH-ENERGY ION-IMPLANTATION IN SI
    TAMURA, M
    SUZUKI, T
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 318 - 329
  • [49] PHOTORESIST OUTGASSING AND CARBONIZATION DURING HIGH-ENERGY ION-IMPLANTATION
    OCONNOR, JP
    RILEY, JT
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 2 (1-3): : 177 - 182
  • [50] HIGH-ENERGY ION-IMPLANTATION OF POLYMERS - POLY(VINYLIDENE FLUORIDE)
    SAID, MA
    BALIK, CM
    CARLSON, JD
    [J]. JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 1988, 26 (07) : 1457 - 1467
12345