DAMAGE FORMATION AND ANNEALING OF HIGH-ENERGY ION-IMPLANTATION IN SI

被引:49
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作者
TAMURA, M
SUZUKI, T
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D O I
10.1016/0168-583X(89)90795-7
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TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
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页码:318 / 329
页数:12
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