LARGE NEGATIVE RESISTANCE IN SILICON P-I-N DIODES AT 300 DEGREES K

被引：0
|
作者：
AFANASJE.J
NORDMAN, JE
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 11期
关键词：
D O I：
10.1109/PROC.1967.6059
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2043 / &
相关论文
共 50 条
  • [41] THIN SILICON FILM P-I-N PHOTO-DIODES WITH INTERNAL-REFLECTION
    MULLER, J
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (01) : 173 - 179
  • [42] Temperature dependence of electroluminescence from silicon p-i-n light-emitting diodes
    Li, Cheng
    Lai, Hongkai
    Chen, Songyan
    Suemasu, T.
    Hasegawa, F.
    [J]. Journal of Applied Physics, 2006, 100 (02):
  • [43] SPACE CHARGE AND OSCILLATION EFFECTS IN GOLD-DOPED SILICON P-I-N DIODES
    MOORE, JS
    HOLONYAK, N
    SIRKIS, MD
    [J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 823 - &
  • [44] SILICON P-I-N PHOTO-DIODES WITH V-LIKE REFLECTION RELIEF
    VILISOV, AA
    VORONKOV, VP
    POZOLOTIN, VA
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (05): : 570 - 571
  • [45] Monolithic integration of GaAs p-i-n photodetectors grown on 300 mm silicon wafers
    Mehdi, H.
    Martin, M.
    David, S.
    Hartmann, J. M.
    Moeyaert, J.
    Touraton, M. L.
    Jany, C.
    Virot, L.
    Da Fonseca, J.
    Coignus, J.
    Blachier, D.
    Baron, T.
    [J]. AIP ADVANCES, 2020, 10 (12)
  • [46] Non-monotonic dependence of current upon i-width in silicon p-i-n diodes
    Pang, Zheng-Peng
    Wang, Xin
    Chen, Jian
    Yang, Pan
    Zhang, Yang
    Tian, Yong-Hui
    Yang, Jian-Hong
    [J]. CHINESE PHYSICS B, 2018, 27 (06)
  • [47] ELECTRONICALLY TUNED FILTER USING P-I-N DIODES
    HAMILTON, CH
    [J]. ELECTRONICS LETTERS, 1970, 6 (22) : 697 - &
  • [48] Current-controlled negative resistance (CCNR) in SiC P-i-N rectifiers
    Ramungul, N
    Chow, TP
    [J]. ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, : 123 - 126
  • [49] INSTABILITY IN AVALANCHE REGION OF SI P-I-N DIODES
    OKUTO, Y
    KONDO, M
    NAGASHIM.I
    UCHIDA, I
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (05) : 533 - &
  • [50] Thermal Characterization of GaN Vertical p-i-n Diodes
    Dallas, J.
    Pavlidis, G.
    Chatterjee, B.
    Lundh, J. S.
    Jig, M.
    Kim, J.
    Kao, T.
    Detchprohm, T.
    Dupuis, R. D.
    Shen, S.
    Graham, S.
    Choi, S.
    [J]. PROCEEDINGS OF THE SIXTEENTH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS ITHERM 2017, 2017, : 328 - 333
12345