Current-controlled negative resistance (CCNR) in SiC P-i-N rectifiers

被引：3

作者：

Ramungul, N ^{[1
]}

Chow, TP ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Troy, NY 12180 USA

来源：

ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 1998年

关键词：

D O I：

10.1109/ISPSD.1998.702651

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an experimental demonstration of a Current-Controlled Negative Resistance (CCNR) in the forward characteristics of 6H-SiC PiN rectifiers. These forward characteristics indicate that the poor electrical performance of SiC diodes arises because conductivity modulation is not yet established. The cause of this behavior appears to be high defect densities and low minority carrier lifetime in the lightly doped drift region. N+P junctions exhibit excellent forward characteristics with forward drop of 2.8V at 100A/cm(2) and 3.9V at 1000A/cm(2) without entering the CCNR mode when traps have been filled prior to the measurement.

引用

页码：123 / 126

页数：4

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