Non-monotonic dependence of current upon i-width in silicon p-i-n diodes

被引：0
|
作者：
Pang, Zheng-Peng [1 ]
Wang, Xin [1 ]
Chen, Jian [1 ]
Yang, Pan [1 ]
Zhang, Yang [1 ]
Tian, Yong-Hui [1 ]
Yang, Jian-Hong [1 ]
机构：
[1] Lanzhou Univ, Inst Microelect, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China
来源：
CHINESE PHYSICS B | 2018年 / 27卷 / 06期
关键词：
semiconductor; junction diodes; transport properties; HIGH-CURRENT DENSITIES; POWER RECTIFIERS; TRANSISTORS; VOLTAGE;
D O I：
10.1088/1674-1056/27/6/066106
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Silicon p-i-n diodes with different i-region widths are fabricated and tested. It is found that the current shows the non-monotonic behavior as a function of i-region width at a bias voltage of 1.0 V. In this paper, an analytical model is presented to explain the non-monotonic behavior, which mainly takes into account the diffusion current and recombination current contributing to the total current. The calculation results indicate that the concentration ratio of p-region to n-region plays a crucial role in the non-monotonic behavior, and the carrier lifetime also has a great influence on this abnormal phenomenon.
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页数：4
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