Neutron dosimetry with planar silicon p-i-n diodes

被引：25
|
作者：
Rosenfeld, AB [1 ]
Yudelev, M
Lerch, MLE
Cornelius, I
Griffin, P
Perevertailo, VL
Anokhin, IE
Zinets, OS
Khivrich, VI
Pinkovskaya, M
Alexiev, D
Reinhard, M
机构：
[1] Univ Wollongong, Ctr Med Radiat Phys, Wollongong, NSW 2522, Australia
[2] Wayne State Univ, Karmanos Canc Inst, Detroit, MI 48201 USA
[3] Sandia Natl Labs, Albuquerque, NM 87185 USA
[4] SPA BIT Detector, UA-254163 Kiev, Ukraine
[5] Inst Nucl Res, UA-252028 Kiev, Ukraine
[6] Australian Nucl Sci & Technol Org, Menai, NSW 2234, Australia
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2003年 / 50卷 / 06期
关键词：
gamma dosimetry; neutron dosimetry; p-i-n diode;
D O I：
10.1109/TNS.2003.821390
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New nonionizing energy losses (NIEL) sensors based on silicon planar p-i-n diodes of different geometry have been investigated and their response to fast neutron field compared with bulk diodes. The possibility of obtaining a wide range of sensitivities in these NIEL sensors simultaneously with measurements of IEL has been demonstrated.
引用
收藏
页码：2367 / 2372
页数：6
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