Leakage current of amorphous silicon p-i-n diodes made by ion shower doping

被引：6

作者：

Kim, HJ ^{[1
]}

Cho, G ^{[1
]}

Choi, J ^{[1
]}

Jung, KW ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Nucl & Quantum Engn, Yusung Gu 305701, Daejon, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 25期

关键词：

Amorphous silicon (a-Si:H) - Amorphous silicon flat-panel - High currents - High injection - Ion shower doping - PiN diode - Pin photodiode - Plasma enhanced chemical vapor depositions (PE CVD);

D O I：

10.1063/1.1489485

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cmx40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2-3 pA/mm(2) at -5 V. This high current originates from the high injection current at the p-i junction. (C) 2002 American Institute of Physics.

引用

页码：4843 / 4845

页数：3

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