Modeling of reverse current behavior in amorphous thin and thick p-i-n diodes

We present an analytical model for the calculation of the nonuniform electric field distribution inside the three layers of an amorphous p-i-n diode. Field dependent Poole-Frenkel emission factors, responsible for the exponential voltage dependence of the dark current of amorphous p-i-n diodes are recalculated for the resulting nonuniform electric field distribution inside the intrinsic layer. Results are compared with experiments and with calculations using the constant field distribution approximation to show under which conditions each approach can be used.