共 50 条
- [1] Research on reverse recovery characteristics of SiGeC p-i-n diodes [J]. CHINESE PHYSICS B, 2008, 17 (12) : 4635 - 4639
- [2] Research on reverse recovery characteristics of SiGeC p-i-n diodes [J]. Chinese Physics B, 2008, 17 (12) : 4635 - 4639
- [3] DEVELOPMENT AND PROPERTIES OF MICROWAVE P-I-N DIODES [J]. RADIO AND ELECTRONIC ENGINEER, 1965, 29 (05): : 293 - &
- [4] CHARACTERIZATION OF P-I-N DIODES AT MICROWAVE FREQUENCIES [J]. ELECTRONIC ENGINEERING, 1968, 40 (485): : 368 - &
- [7] INVESTIGATION OF EQUIVALENT MICROWAVE PARAMETERS OF ION-IMPLANTED P-I-N DIODES AT ZERO BIAS [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1973, 18 (08): : 1688 - 1693