DESIGN CALCULATIONS OF REVERSE BIAS CHARACTERISTICS FOR MICROWAVE P-I-N DIODES

被引:6
|
作者
OLSON, HM
机构
关键词
D O I
10.1109/T-ED.1967.15975
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:418 / &
相关论文
共 50 条
  • [1] Research on reverse recovery characteristics of SiGeC p-i-n diodes
    Gao Yong
    Liu Jing
    Yang Yuan
    [J]. CHINESE PHYSICS B, 2008, 17 (12) : 4635 - 4639
  • [2] Research on reverse recovery characteristics of SiGeC p-i-n diodes
    高勇
    刘静
    杨媛
    [J]. Chinese Physics B, 2008, 17 (12) : 4635 - 4639
  • [3] DEVELOPMENT AND PROPERTIES OF MICROWAVE P-I-N DIODES
    GISSING, JG
    [J]. RADIO AND ELECTRONIC ENGINEER, 1965, 29 (05): : 293 - &
  • [4] CHARACTERIZATION OF P-I-N DIODES AT MICROWAVE FREQUENCIES
    BAILEY, AG
    ROBSON, PN
    [J]. ELECTRONIC ENGINEERING, 1968, 40 (485): : 368 - &
  • [5] Reverse-recovery of diamond p-i-n diodes
    Traore, Aboulaye
    Nakajima, Akira
    Makino, Toshiharu
    Kuwabara, Daisuke
    Kato, Hiromitsu
    Ogura, Masahiko
    Takeuchi, Daisuke
    Yamasaki, Satoshi
    [J]. IET POWER ELECTRONICS, 2018, 11 (04) : 695 - 699
  • [6] P-I-N DIODES TURN ON MICROWAVE BANDS FASTER
    BARONE, A
    [J]. ELECTRONICS, 1968, 41 (09): : 67 - &
  • [7] INVESTIGATION OF EQUIVALENT MICROWAVE PARAMETERS OF ION-IMPLANTED P-I-N DIODES AT ZERO BIAS
    VENDIK, IB
    RESH, EA
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1973, 18 (08): : 1688 - 1693
  • [8] Voltage Noise Characteristics of Polysilicon P-I-N Diodes
    Jamshidi-Roudbari, Abbas
    Hatalis, Miltiadis K.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (04) : 1054 - 1062
  • [9] Dynamics of reverse recovery of high-power P-i-N diodes
    Pendharkar, SP
    Trivedi, M
    Shenai, K
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (01) : 142 - 149
  • [10] Instability of p-i-n perovskite solar cells under reverse bias
    Razera, Ricardo A. Z.
    Jacobs, Daniel A.
    Fu, Fan
    Fiala, Peter
    Dussouillez, Marion
    Sahli, Florent
    Yang, Terry C. J.
    Ding, Laura
    Walter, Arnaud
    Feil, Adriano F.
    Boudinov, Henri I.
    Nicolay, Sylvain
    Ballif, Christophe
    Jeangros, Quentin
    [J]. JOURNAL OF MATERIALS CHEMISTRY A, 2020, 8 (01) : 242 - 250