INSTABILITY IN AVALANCHE REGION OF SI P-I-N DIODES

被引：1
|
作者：
OKUTO, Y
KONDO, M
NAGASHIM.I
UCHIDA, I
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 05期
关键词：
D O I：
10.1143/JJAP.7.553
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：533 / &
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