Avalanche Ruggedness of GaN p-i-n Diodes Grown on Sapphire Substrate

被引：10

作者：

Liu, Wenkai ^{[1
]}

Xu, Weizong ^{[1
]}

Zhou, Dong ^{[1
]}

Ren, Fangfang ^{[1
]}

Chen, Dunjun ^{[1
]}

Yu, Peng ^{[2
]}

Zhang, Rong ^{[1
]}

Zheng, Youdou ^{[1
]}

Lu, Hai ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China

[2] State Grid Shandong Elect Power Res Inst, Jinan 250001, Shandong, Peoples R China

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2018年 / 215卷 / 18期

基金：

国家重点研发计划;

关键词：

avalanche ruggedness; gallium nitride; localized avalanche multiplication; p-i-n diodes; LIGHT-EMITTING-DIODES; BREAKDOWN;

D O I：

10.1002/pssa.201800069

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Avalanche capability plays critical roles in safe operation of GaN-based high power devices and systems. In this study, GaN-based quasi-vertical p-i-n diodes on sapphire substrate with avalanche capability are fabricated, and for the first time, their avalanche ruggedness is investigated. Repeated avalanche breakdown tests suggest the representative features of avalanche-capability degradation, reduction in breakdown voltage, and rise in reverse leakage current. Further numerical simulations reveal the localization of avalanche breakdown, while subsequent pulsed current-voltage measurements identify that the thermal heating effect generated during localized avalanche multiplication is responsible for the device degradation in avalanche ruggedness.

引用

页数：6

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