Highly Enhanced Inductive Current Sustaining Capability and Avalanche Ruggedness in GaN p-i-n Diodes With Shallow Bevel Termination

被引：20

作者：

Nie, Kai-Wen ^{[1
]}

Xu, Wei-Zong ^{[1
]}

Ren, Fang-Fang ^{[1
]}

Zhou, Dong ^{[1
]}

Pan, Dan-Feng ^{[1
]}

Ye, Jian-Dong ^{[1
]}

Chen, Dun-Jun ^{[1
]}

Zhang, Rong ^{[1
]}

Zheng, You-Dou ^{[1
]}

Lu, Hai ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 03期

基金：

中国国家自然科学基金;

关键词：

GaN p-i-n power diode; shallow bevel termination; inductive current sustaining capability; avalanche ruggedness; DEVICES;

D O I：

10.1109/LED.2020.2970552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, small-angle beveled-mesa termination technique was developed in GaN p-i-n power diodes for high avalanche performances. With effective alleviation of electric field crowding effect at the junction sidewall, near uniform distribution of avalanche breakdown was realized. Resultantly, state-of-the-art inductive avalanche current density of similar to 31.5 kA/cm(2) and average parallel-plane breakdown electric field of 2.86 MV/cm was achieved in the terminated diodes. Meanwhile, ruggedness of the avalanche breakdown has also been evidently promoted, under both repetitive dc reverse breakdown stresses and unclamped inductive switch conditions.

引用

页码：469 / 472

页数：4

共 50 条

[1] Avalanche Ruggedness of GaN p-i-n Diodes Grown on Sapphire Substrate
Liu, Wenkai
Xu, Weizong
Zhou, Dong
Ren, Fangfang
Chen, Dunjun
Yu, Peng
Zhang, Rong
Zheng, Youdou
Lu, Hai
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (18):
[2] Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes With Avalanche Capability
Lundh, James Spencer
Jacobs, Alan G.
Pandey, Prakash
Nelson, Tolen
Georgiev, Daniel G.
Koehler, Andrew D.
Khanna, Raghav
Tadjer, Marko J.
Hobart, Karl D.
Anderson, Travis J.
[J]. IEEE ELECTRON DEVICE LETTERS, 2024, 45 (05) : 873 - 876
[3] Low Leakage and High Gain GaN p-i-n Avalanche Photodiode With Shallow Bevel Mesa Edge Termination and Recessed Window
Xu, Zhiyu
Detchprohm, Theeradetch
Shen, Shyh-Chiang
Otte, A. Nepomuk
Dupuis, Russell D.
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (06) : 3761 - 3768
[4] GaN-on-GaN p-i-n diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment
Fu, Kai
He, Ziyi
Yang, Chen
Zhou, Jingan
Fu, Houqiang
Zhao, Yuji
[J]. APPLIED PHYSICS LETTERS, 2022, 121 (09)
[5] Surge Current and Avalanche Ruggedness of 1.2-kV Vertical GaN p-n Diodes
Liu, Jingcun
Zhang, Ruizhe
Xiao, Ming
Pidaparthi, Subhash
Cui, Hao
Edwards, Andrew
Baubutr, Lek
Drowley, Cliff
Zhang, Yuhao
[J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2021, 36 (10) : 10959 - 10964
[6] Dark Current Simulation of GaN/AlGaN p-i-n Avalanche Photodiode
Cao, Z. X.
Hu, W. D.
Chen, X. S.
Lu, W.
Wang, L.
Li, X. Y.
[J]. NUSOD 2009: 9TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, PROCEEDINGS, 2009, : 81 - +
[7] Current-voltage characteristics of GaN and AlGaN p-i-n diodes
Kuznetsov, NI
Irvine, KG
[J]. SEMICONDUCTORS, 1998, 32 (03) : 335 - 338
[8] Current-voltage characteristics of GaN and AlGaN p-i-n diodes
N. I. Kuznetsov
K. G. Irvine
[J]. Semiconductors, 1998, 32 : 335 - 338
[9] Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates
Zou, Xinbo
Zhang, Xu
Lu, Xing
Tang, Chak Wah
Lau, Kei May
[J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (09) : 1158 - 1161
[10] INSTABILITY IN AVALANCHE REGION OF SI P-I-N DIODES
OKUTO, Y
KONDO, M
NAGASHIM.I
UCHIDA, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (05) : 533 - &

← 1 2 3 4 5 →