HIGH-ENERGY IMPLANTATION OF BURIED INSULATING LAYERS

被引：9
|
作者：
BAYERL, P
RYSSEL, H
RAMIN, M
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1980年 / 47卷 / 1-4期
关键词：
D O I：
10.1080/00337578008209213
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
收藏
页码：217 / 220
页数：4
相关论文
共 50 条
  • [1] BURIED DOPANT AND DEFECT LAYERS FOR DEVICE STRUCTURES WITH HIGH-ENERGY ION-IMPLANTATION
    CHEUNG, NW
    LIANG, CL
    LIEW, BK
    MUTIKAINEN, RH
    WONG, H
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 37-8 : 941 - 950
  • [2] Formation of buried SiC layers in Si by high-energy C+ ion implantation
    Shirakura, H
    Kanda, T
    Kitahara, M
    Inada, T
    [J]. REPORT OF RESEARCH CENTER OF ION BEAM TECHNOLOGY HOSEI UNIVERSITY, SUPPLEMENT NO.16, 1997, : 101 - 104
  • [3] FORMATION OF BURIED INSULATING LAYERS IN SILICON BY THE IMPLANTATION OF HIGH-DOSES OF OXYGEN
    HEMMENT, PLF
    MAYDELLONDRUSZ, E
    STEPHENS, KG
    BUTCHER, J
    IOANNOU, D
    ALDERMAN, J
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 157 - 164
  • [4] SYNTHESIS OF BURIED INSULATING LAYERS IN SILICON BY ION-IMPLANTATION
    IBRAHIM, AM
    BEREZIN, AA
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 1992, 31 (04) : 285 - 300
  • [5] Formation of delta-doped, buried conducting layers in diamond, by high-energy, B-ion implantation
    Uzan-Saguy, C
    Kalish, R
    Walker, R
    Jamieson, DN
    Prawer, S
    [J]. DIAMOND AND RELATED MATERIALS, 1998, 7 (10) : 1429 - 1432
  • [6] OPTIMIZED CONDITIONS FOR THE FORMATION OF BURIED INSULATING LAYERS IN SI BY HIGH-DOSE IMPLANTATION OF OXYGEN
    HOLLAND, OW
    FATHY, D
    NARAYAN, J
    SJOREEN, TP
    WILSON, SR
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 71 (1-3) : 163 - 170
  • [7] PROPERTIES OF BURIED INSULATING LAYERS IN SILICON FORMED BY HIGH-DOSE IMPLANTATION AT 60 KEV
    SKORUPA, W
    WOLLSCHLAGER, K
    GROTZSCHEL, R
    SCHONEICH, J
    HENTSCHEL, E
    KOTTE, R
    STARY, F
    BARTSCH, H
    GOTZ, G
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 32 (1-4): : 440 - 445
  • [8] FORMATION OF BURIED INSULATING LAYERS BY HIGH-DOSE OXYGEN IMPLANTATION UNDER CONTROLLED TEMPERATURE CONDITIONS
    BRUEL, M
    MARGAIL, J
    STOEMENOS, J
    MARTIN, P
    JAUSSAUD, C
    [J]. VACUUM, 1985, 35 (12) : 589 - 593
  • [9] CHARACTERISTICS OF BIPOLAR-TRANSISTORS WITH VARIOUS DEPTHS OF N+ BURIED LAYERS FORMED BY HIGH-ENERGY ION-IMPLANTATION
    TAMBA, A
    KOBAYASHI, Y
    SUZUKI, T
    NATSUAKI, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (2A): : 156 - 160
  • [10] FORMATION OF IMBEDDED COSI2 LAYERS BY HIGH-ENERGY IMPLANTATION AND ANNEALING
    ZARING, C
    JIANG, H
    OSTLING, M
    WHITLOW, HJ
    PETERSSON, CS
    PHIL, T
    [J]. VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1987, 42 (236): : 55 - 57
12345