CHARACTERISTICS OF BIPOLAR-TRANSISTORS WITH VARIOUS DEPTHS OF N+ BURIED LAYERS FORMED BY HIGH-ENERGY ION-IMPLANTATION

被引：5
|
作者：
TAMBA, A [1 ]
KOBAYASHI, Y [1 ]
SUZUKI, T [1 ]
NATSUAKI, N [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 2A期
关键词：
HIGH-ENERGY ION IMPLANTATION (HEI2); BIPOLAR TRANSISTOR; N+ BURIED LAYER; BREAKDOWN VOLTAGE; LEAKAGE CURRENT; BICMOS;
D O I：
10.1143/JJAP.31.156
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Bipolar transistors having n+ buried layers of various depths formed by high-energy ion implantation are investigated in order to obtain bipolar transistor of various performances in a single chip. The breakdown voltage between the emitter and the collector (BV(CEO)) values are controlled and decreased with increasing oxide thickness with high-energy ion implantation in Si dioxide films of varying thicknesses. The maximum BV(CEO) value obtained is 7.8 V. Base-collector leakage currents are very small when secondary defects are contained within the n+ buried layer. This method should be very effective for designing both BiCMOS and multifunction LSIs.
引用
收藏
页码：156 / 160
页数：5
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