PROPERTIES OF BURIED INSULATING LAYERS IN SILICON FORMED BY HIGH-DOSE IMPLANTATION AT 60 KEV

被引：14
|
作者：
SKORUPA, W
WOLLSCHLAGER, K
GROTZSCHEL, R
SCHONEICH, J
HENTSCHEL, E
KOTTE, R
STARY, F
BARTSCH, H
GOTZ, G
机构：
[1] INST SOLID STATE PHYS & ELECTRON MICROSCOPY,DDR-4050 HALLE,GER DEM REP
[2] FRIEDRICH SCHILLER UNIV,SEKT PHYS,DDR-6900 JENA,GER DEM REP
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 32卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(88)90253-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：440 / 445
页数：6
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