ANALYSIS OF MICROWAVE CHARACTERISTICS OF HOT-ELECTRONS IN N-TYPE GAAS

被引：0
|
作者：
KANEDA, S
ABE, M
机构：
来源：
ELECTRONICS & COMMUNICATIONS IN JAPAN | 1970年 / 53卷 / 12期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：112 / &
相关论文
共 50 条
  • [1] DEPENDENCE OF THE MICROWAVE NOISE OF HOT-ELECTRONS ON THE TEMPERATURE OF AN N-TYPE GAAS CRYSTAL
    MASLOV, AI
    RZHEVKIN, KS
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 574 - 576
  • [2] INERTIAL PROPERTIES OF HOT-ELECTRONS IN N-TYPE GAAS
    RAGUOTIS, R
    REKLAITIS, A
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 906 - 908
  • [3] DETERMINATION OF THE HALL FACTOR OF HOT-ELECTRONS IN N-TYPE GAAS
    BOCHKAREV, S
    KACHYULIS, S
    PARSHYALYUNAS, I
    TAMULAITIS, G
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 818 - 819
  • [4] CAPTURE OF HOT-ELECTRONS BY IMPURITY CENTERS IN SEMIINSULATING N-TYPE GAAS
    PTASHCHENKO, AA
    MARYUTIN, VI
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (07): : 762 - 764
  • [5] MAGNETORESISTANCE OF HOT-ELECTRONS IN N-TYPE GAAS AT 77-DEGREES-K
    KACHYULIS, S
    PARSHYALYUNAS, I
    BOCHKAREV, S
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1064 - 1065
  • [6] RECOMBINATION OF HOT-ELECTRONS WITH HOLES AT TRAPPING CENTERS IN EPITAXIAL N-TYPE GAAS
    AKIMOV, AV
    SHOFMAN, VG
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (07): : 684 - 685
  • [7] IMPACT EXCITATION OF SHALLOW DONOR IMPURITIES BY HOT-ELECTRONS IN N-TYPE GAAS
    TRAGER, C
    COWAN, DA
    STRADLING, RA
    [J]. PHYSICA B & C, 1985, 134 (1-3): : 250 - 254
  • [8] ANISOTROPY OF MICROWAVE COMPLEX CONDUCTIVITY DUE TO HOT-ELECTRONS IN N-TYPE GERMANIUM
    KOBAYASHI, T
    NISHIDA, Y
    FUJISAWA, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (06) : 1025 - 1026
  • [9] EXPERIMENTAL STUDY OF MILLIMETER-WAVE CHARACTERISTICS OF HOT-ELECTRONS IN N-TYPE GAAS BY ELECTRODELESS METHOD
    KANEDA, S
    ABE, M
    HORIMA, H
    [J]. ELECTRONICS & COMMUNICATIONS IN JAPAN, 1971, 54 (12): : 113 - 118
  • [10] NOISE AND DIFFUSIVITY OF HOT-ELECTRONS IN N-TYPE INSB
    BAREIKIS, V
    GALDIKAS, A
    MILIUSYTE, R
    POZHELA, J
    VIKTORAVICIUS, V
    [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC7): : 215 - 220
12345