RECOMBINATION OF HOT-ELECTRONS WITH HOLES AT TRAPPING CENTERS IN EPITAXIAL N-TYPE GAAS

被引：0

作者：

AKIMOV, AV

SHOFMAN, VG

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1991年 / 25卷 / 07期

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暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The density of holes captured by traps in epitaxial n-type GaAs decreased on transmission of a current pulse through an epitaxial film. Such a reduction was explained by an increase in the probability of recombination of hot electrons with holes localized at trapping centers.

引用

页码：684 / 685

页数：2

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