共 50 条
- [1] INERTIAL PROPERTIES OF HOT ELECTRONS IN n-TYPE GaAs. Soviet physics. Semiconductors, 1981, 15 (08): : 906 - 908
- [2] ANALYSIS OF MICROWAVE CHARACTERISTICS OF HOT-ELECTRONS IN N-TYPE GAAS ELECTRONICS & COMMUNICATIONS IN JAPAN, 1970, 53 (12): : 112 - &
- [3] DETERMINATION OF THE HALL FACTOR OF HOT-ELECTRONS IN N-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 818 - 819
- [4] CAPTURE OF HOT-ELECTRONS BY IMPURITY CENTERS IN SEMIINSULATING N-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (07): : 762 - 764
- [5] MAGNETORESISTANCE OF HOT-ELECTRONS IN N-TYPE GAAS AT 77-DEGREES-K SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1064 - 1065
- [6] RECOMBINATION OF HOT-ELECTRONS WITH HOLES AT TRAPPING CENTERS IN EPITAXIAL N-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (07): : 684 - 685
- [7] IMPACT EXCITATION OF SHALLOW DONOR IMPURITIES BY HOT-ELECTRONS IN N-TYPE GAAS PHYSICA B & C, 1985, 134 (1-3): : 250 - 254
- [8] DEPENDENCE OF THE MICROWAVE NOISE OF HOT-ELECTRONS ON THE TEMPERATURE OF AN N-TYPE GAAS CRYSTAL SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 574 - 576
- [9] NOISE AND DIFFUSIVITY OF HOT-ELECTRONS IN N-TYPE INSB JOURNAL DE PHYSIQUE, 1981, 42 (NC7): : 215 - 220
- [10] NOISE AND DIFFUSION OF HOT-ELECTRONS IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1165 - 1167