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- [2] MILLIMETER-WAVE FREQUENCY-RESPONSE OF HOT-ELECTRONS IN N TYPE GAAS ELECTRONICS & COMMUNICATIONS IN JAPAN, 1972, 55 (06): : 113 - 118
- [3] MILLIMETER-WAVE FREQUENCY RESPONSE OF HOT ELECTRONS IN n-TYPE GaAs. Electronics and Communications in Japan (English translation of Denshi Tsushin Gakkai Zasshi), 1972, 55 (06): : 113 - 118
- [4] ANALYSIS OF MICROWAVE CHARACTERISTICS OF HOT-ELECTRONS IN N-TYPE GAAS ELECTRONICS & COMMUNICATIONS IN JAPAN, 1970, 53 (12): : 112 - &
- [5] INERTIAL PROPERTIES OF HOT-ELECTRONS IN N-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 906 - 908
- [6] DETERMINATION OF THE HALL FACTOR OF HOT-ELECTRONS IN N-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 818 - 819
- [7] CAPTURE OF HOT-ELECTRONS BY IMPURITY CENTERS IN SEMIINSULATING N-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (07): : 762 - 764
- [8] MAGNETORESISTANCE OF HOT-ELECTRONS IN N-TYPE GAAS AT 77-DEGREES-K SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1064 - 1065
- [9] RECOMBINATION OF HOT-ELECTRONS WITH HOLES AT TRAPPING CENTERS IN EPITAXIAL N-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (07): : 684 - 685
- [10] IMPACT EXCITATION OF SHALLOW DONOR IMPURITIES BY HOT-ELECTRONS IN N-TYPE GAAS PHYSICA B & C, 1985, 134 (1-3): : 250 - 254