ANISOTROPY OF MICROWAVE COMPLEX CONDUCTIVITY DUE TO HOT-ELECTRONS IN N-TYPE GERMANIUM

被引：0

作者：

KOBAYASHI, T ^{[1
]}

NISHIDA, Y ^{[1
]}

FUJISAWA, K ^{[1
]}

机构：

[1] OSAKA UNIV, FAC ENGN SCI, DEPT ELECT ENGN, TOYONAKA 560, OSAKA, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 06期

关键词：

D O I：

10.1143/JJAP.13.1025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1025 / 1026

页数：2

共 50 条

[1] ANISOTROPY OF HOT ELECTRONS IN N-TYPE GERMANIUM
SASAKI, W
SHIBUYA, M
MIZUGUCHI, K
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1958, 13 (05) : 456 - 460
[2] CONDUCTIVITY ANISOTROPY OF HOT ELECTRONS IN N-TYPE SILICON HEATED BY MICROWAVE FIELDS
HAMAGUCHI, C
INUISHI, Y
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (09) : 1511 - +
[3] ANALYSIS OF MICROWAVE CHARACTERISTICS OF HOT-ELECTRONS IN N-TYPE GAAS
KANEDA, S
ABE, M
[J]. ELECTRONICS & COMMUNICATIONS IN JAPAN, 1970, 53 (12): : 112 - &
[4] EXPERIMENTAL EVIDENCE OF THE ANISOTROPY OF HOT ELECTRONS IN N-TYPE GERMANIUM
SASAKI, W
SHIBUYA, M
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1956, 11 (11) : 1202 - 1203
[5] FARADAY-EFFECT DUE TO HOT-ELECTRONS IN N-TYPE INSB
POTAPOV, VT
SOKOLOVSKII, AV
TRIFONOV, VI
YAREMENKO, NG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (07): : 1081 - 1083
[6] DEPENDENCE OF THE MICROWAVE NOISE OF HOT-ELECTRONS ON THE TEMPERATURE OF AN N-TYPE GAAS CRYSTAL
MASLOV, AI
RZHEVKIN, KS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 574 - 576
[7] NOISE AND DIFFUSIVITY OF HOT-ELECTRONS IN N-TYPE INSB
BAREIKIS, V
GALDIKAS, A
MILIUSYTE, R
POZHELA, J
VIKTORAVICIUS, V
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC7): : 215 - 220
[8] NOISE AND DIFFUSION OF HOT-ELECTRONS IN N-TYPE INSB
BAREIKIS, V
VIKTORAVICHYUS, V
GALDIKAS, A
MILYUSHITE, R
POZHELA, Y
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (10): : 1165 - 1167
[9] INERTIAL PROPERTIES OF HOT-ELECTRONS IN N-TYPE GAAS
RAGUOTIS, R
REKLAITIS, A
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 906 - 908
[10] MICROWAVE CONDUCTIVITY AND INTERVALLEY TRANSFER OF HOT ELECTRONS IN N-TYPE SILICON
HOLMKENN.J
CHAMPLIN, KS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (09) : 689 - &

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