EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS

被引：131
|
作者：
SUCIU, PI
JOHNSTON, RL
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 09期
关键词：
D O I：
10.1109/T-ED.1980.20116
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1846 / 1848
页数：3
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