首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
TEMPERATURE DEPENDENCE OF DRAIN CURRENT OF MOS-TRANSISTORS
被引:0
|
作者
:
STILLGER, J
论文数:
0
引用数:
0
h-index:
0
STILLGER, J
机构
:
来源
:
ZEITSCHRIFT FUR ANGEWANDTE PHYSIK
|
1968年
/ 25卷
/ 04期
关键词
:
D O I
:
暂无
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:177 / +
页数:1
相关论文
共 50 条
[1]
DRAIN VOLTAGE LIMITATIONS OF MOS-TRANSISTORS
BATEMAN, IM
论文数:
0
引用数:
0
h-index:
0
机构:
QUEENS UNIV BELFAST, DEPT ELECT & ELECT, BELFAST BT7 INN, NORTH IRELAND
QUEENS UNIV BELFAST, DEPT ELECT & ELECT, BELFAST BT7 INN, NORTH IRELAND
BATEMAN, IM
ARMSTRONG, GA
论文数:
0
引用数:
0
h-index:
0
机构:
QUEENS UNIV BELFAST, DEPT ELECT & ELECT, BELFAST BT7 INN, NORTH IRELAND
QUEENS UNIV BELFAST, DEPT ELECT & ELECT, BELFAST BT7 INN, NORTH IRELAND
ARMSTRONG, GA
MAGOWAN, JA
论文数:
0
引用数:
0
h-index:
0
机构:
QUEENS UNIV BELFAST, DEPT ELECT & ELECT, BELFAST BT7 INN, NORTH IRELAND
QUEENS UNIV BELFAST, DEPT ELECT & ELECT, BELFAST BT7 INN, NORTH IRELAND
MAGOWAN, JA
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(06)
: 539
-
550
[2]
MODEL FOR DRAIN CURRENT RTS AMPLITUDE IN SMALL-AREA MOS-TRANSISTORS
BUISSON, ORD
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique des Composants à Semiconducteurs, URA CNRS, ENSERG, 38016 Grenoble, 23 rue des Martyrs
BUISSON, ORD
GHIBAUDO, G
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique des Composants à Semiconducteurs, URA CNRS, ENSERG, 38016 Grenoble, 23 rue des Martyrs
GHIBAUDO, G
BRINI, J
论文数:
0
引用数:
0
h-index:
0
机构:
Laboratoire de Physique des Composants à Semiconducteurs, URA CNRS, ENSERG, 38016 Grenoble, 23 rue des Martyrs
BRINI, J
[J].
SOLID-STATE ELECTRONICS,
1992,
35
(09)
: 1273
-
1276
[3]
INVESTIGATION OF DRAIN CURRENT RTS NOISE IN SMALL AREA SILICON MOS-TRANSISTORS
ROUX, O
论文数:
0
引用数:
0
h-index:
0
机构:
LPCS, ENSERG, URA CNRS, 38016 Grenoble
ROUX, O
DIERICKX, B
论文数:
0
引用数:
0
h-index:
0
机构:
LPCS, ENSERG, URA CNRS, 38016 Grenoble
DIERICKX, B
SIMOEN, E
论文数:
0
引用数:
0
h-index:
0
机构:
LPCS, ENSERG, URA CNRS, 38016 Grenoble
SIMOEN, E
CLAEYS, C
论文数:
0
引用数:
0
h-index:
0
机构:
LPCS, ENSERG, URA CNRS, 38016 Grenoble
CLAEYS, C
GHIBAUDO, G
论文数:
0
引用数:
0
h-index:
0
机构:
LPCS, ENSERG, URA CNRS, 38016 Grenoble
GHIBAUDO, G
BRINI, J
论文数:
0
引用数:
0
h-index:
0
机构:
LPCS, ENSERG, URA CNRS, 38016 Grenoble
BRINI, J
[J].
MICROELECTRONIC ENGINEERING,
1991,
15
(1-4)
: 547
-
550
[4]
AN ANALYTICAL MODEL FOR LIGHTLY DOPED DRAIN MOS-TRANSISTORS
GHARABAGI, R
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, St. Louis University, Parks College, Cahokia, IL
GHARABAGI, R
KHALILI, A
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, St. Louis University, Parks College, Cahokia, IL
KHALILI, A
SHOLY, B
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering, St. Louis University, Parks College, Cahokia, IL
SHOLY, B
[J].
INTERNATIONAL JOURNAL OF ELECTRONICS,
1995,
78
(03)
: 509
-
517
[5]
EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS
SUCIU, PI
论文数:
0
引用数:
0
h-index:
0
SUCIU, PI
JOHNSTON, RL
论文数:
0
引用数:
0
h-index:
0
JOHNSTON, RL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1980,
27
(09)
: 1846
-
1848
[6]
DEPENDENCE OF CHARACTERISTICS OF MOS-TRANSISTORS ON SUBSTRATE RESISTIVITY
DAS, MB
论文数:
0
引用数:
0
h-index:
0
DAS, MB
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(03)
: 305
-
+
[7]
NEW ANALYTICAL EXPRESSION FOR THE DRAIN CURRENT OF SHORT-CHANNEL MOS-TRANSISTORS IN THE TRIODE REGION
DIMITRIJEV, S
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Nis, Belgrade, Yugosl, Univ of Nis, Belgrade, Yugosl
DIMITRIJEV, S
ZUPAC, D
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Nis, Belgrade, Yugosl, Univ of Nis, Belgrade, Yugosl
ZUPAC, D
STOJADINOVIC, N
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Nis, Belgrade, Yugosl, Univ of Nis, Belgrade, Yugosl
STOJADINOVIC, N
[J].
ELECTRONICS LETTERS,
1987,
23
(16)
: 862
-
864
[8]
CURRENT PULSE GENERATION WITH POWER MOS-TRANSISTORS
ZIENKO, SI
论文数:
0
引用数:
0
h-index:
0
ZIENKO, SI
GRUDEN, MN
论文数:
0
引用数:
0
h-index:
0
GRUDEN, MN
SMERDOV, VY
论文数:
0
引用数:
0
h-index:
0
SMERDOV, VY
[J].
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES,
1984,
27
(03)
: 642
-
644
[9]
Temperature dependence of surface recombination current in MOS transistors
Wang, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Florida, Dept Elect Engn, Florida Solid State Elect Lab, Gainesville, FL 32611 USA
Univ Florida, Dept Elect Engn, Florida Solid State Elect Lab, Gainesville, FL 32611 USA
Wang, Y
Neugroschel, A
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Florida, Dept Elect Engn, Florida Solid State Elect Lab, Gainesville, FL 32611 USA
Univ Florida, Dept Elect Engn, Florida Solid State Elect Lab, Gainesville, FL 32611 USA
Neugroschel, A
Sah, CT
论文数:
0
引用数:
0
h-index:
0
机构:
Univ Florida, Dept Elect Engn, Florida Solid State Elect Lab, Gainesville, FL 32611 USA
Univ Florida, Dept Elect Engn, Florida Solid State Elect Lab, Gainesville, FL 32611 USA
Sah, CT
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
2001,
48
(09)
: 2095
-
2101
[10]
INCREASED DRAIN SATURATION CURRENT IN ULTRA-THIN SILICON-ON-INSULATOR (SOI) MOS-TRANSISTORS
STURM, JC
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94305
HEWLETT PACKARD LABS,PALO ALTO,CA 94305
STURM, JC
TOKUNAGA, K
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94305
HEWLETT PACKARD LABS,PALO ALTO,CA 94305
TOKUNAGA, K
COLINGE, JP
论文数:
0
引用数:
0
h-index:
0
机构:
HEWLETT PACKARD LABS,PALO ALTO,CA 94305
HEWLETT PACKARD LABS,PALO ALTO,CA 94305
COLINGE, JP
[J].
IEEE ELECTRON DEVICE LETTERS,
1988,
9
(09)
: 460
-
463
←
1
2
3
4
5
→