EXPERIMENTAL DERIVATION OF THE SOURCE AND DRAIN RESISTANCE OF MOS-TRANSISTORS

被引：131

|

作者：

SUCIU, PI

JOHNSTON, RL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 09期

关键词：

D O I：

10.1109/T-ED.1980.20116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1846 / 1848

页数：3

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