THERMAL RESISTANCE OF INTEGRATED MOS-TRANSISTORS

被引：0
|
作者：
KIRSCHNER, N [1 ]
机构：
[1] SIEMENS AG,FORSCH LAB,MUNICH,FED REP GER
来源：
MICROELECTRONICS AND RELIABILITY | 1975年 / 14卷 / 01期
关键词：
D O I：
10.1016/0026-2714(75)90459-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：37 / 39
页数：3
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