THERMAL RESISTANCE OF INTEGRATED MOS-TRANSISTORS

被引：0

|

作者：

KIRSCHNER, N ^{[1
]}

机构：

[1] SIEMENS AG,FORSCH LAB,MUNICH,FED REP GER

来源：

MICROELECTRONICS AND RELIABILITY | 1975年 / 14卷 / 01期

关键词：

D O I：

10.1016/0026-2714(75)90459-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：37 / 39

页数：3

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