MATCHING PROPERTIES OF MOS-TRANSISTORS

被引:2
|
作者
PELGROM, MJM
机构
[1] Philips Research Laboratories WAY519, 5600 MD Eindhoven
关键词
D O I
10.1016/0168-9002(91)90167-O
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
[No abstract available]
引用
收藏
页码:624 / 626
页数:3
相关论文
共 50 条
  • [1] MATCHING PROPERTIES OF MOS-TRANSISTORS
    PELGROM, MJM
    DUINMAIJER, ACJ
    WELBERS, APG
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1989, 24 (05) : 1433 - 1440
  • [2] DOSIMETRIC PROPERTIES OF MOS-TRANSISTORS
    FRANK, H
    PETR, I
    [J]. JADERNA ENERGIE, 1977, 23 (07): : 258 - 263
  • [3] INSTABILITIES IN MOS-TRANSISTORS
    STOJADINOVIC, N
    DIMITRIJEV, S
    [J]. MICROELECTRONICS RELIABILITY, 1989, 29 (03) : 371 - 380
  • [4] A MODEL FOR MOS-TRANSISTORS
    BHATTI, GS
    JONES, BK
    RUSSELL, PC
    [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (06): : 248 - 252
  • [5] PHOTOREACTIVE EFFECT IN MOS-TRANSISTORS
    ODOBETSKY, SI
    OSADCHUK, VS
    [J]. RADIOTEKHNIKA I ELEKTRONIKA, 1989, 34 (11): : 2387 - 2393
  • [6] INTERFACE STATES IN MOS-TRANSISTORS
    BALDINGE.E
    SEQUIN, C
    [J]. ZEITSCHRIFT FUR ANGEWANDTE MATHEMATIK UND PHYSIK, 1969, 20 (04): : 587 - &
  • [7] TRANSIENT ANALYSIS OF MOS-TRANSISTORS
    OH, SY
    WARD, DE
    DUTTON, RW
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) : 1571 - 1578
  • [8] TRANSIENT ANALYSIS OF MOS-TRANSISTORS
    OH, SY
    WARD, DE
    DUTTON, RW
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1980, 15 (04) : 636 - 643
  • [9] STUDY AND MODELING OF DYNAMIC PROPERTIES OF UHF POWER MOS-TRANSISTORS
    KASSMI, K
    ROSSEL, P
    TRANDUC, H
    OMS, F
    [J]. JOURNAL DE PHYSIQUE III, 1994, 4 (03): : 503 - 529
  • [10] VOLTAGE DIVISION BY MEANS OF MOS-TRANSISTORS
    IGUMNOV, DV
    SHCHERBAKOVA, SN
    [J]. TELECOMMUNICATIONS AND RADIO ENGINEERING, 1989, 44 (10) : 177 - 178