IRON-DOPED LIQUID-PHASE-EPITAXIAL GAAS LAYERS WITH NEGATIVE-RESISTANCE PROPERTIES

被引：7
|
作者：
HASEGAWA, H [1 ]
KOJIMA, K [1 ]
SAKAI, T [1 ]
机构：
[1] HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 07期
关键词：
D O I：
10.1143/JJAP.16.1251
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1251 / 1253
页数：3
相关论文
共 50 条
  • [1] GROWTH OF UNIFORM EPITAXIAL LAYERS BY LIQUID-PHASE-EPITAXIAL METHOD
    BLUM, JM
    SHIH, KK
    [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1394 - &
  • [2] GROWTH OF IRON-DOPED EPITAXIAL LAYERS FOR GAAS FIELD-EFFECT TRANSISTORS
    NAKAI, K
    KITAHARA, K
    SHIBATOMI, A
    OHKAWA, S
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) : 1635 - 1640
  • [3] HALL EFFECT AND RESISTIVITY IN LIQUID-PHASE-EPITAXIAL LAYERS OF HgCdTe.
    Lou, L.F.
    Fye, W.H.
    [J]. Journal of Applied Physics, 1984, 56 (08): : 2253 - 2267
  • [4] SI-DOPED GAAS DIODES WITH NEGATIVE-RESISTANCE
    PARK, SH
    CHOE, BD
    JANG, SJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1775 - 1780
  • [5] Conductivity of high-resistance π layers and parameters of iron-doped GaAs diode structures
    D. L. Budnitskii
    A. I. Gossen
    O. B. Koretskaya
    S. S. Khludkov
    [J]. Russian Physics Journal, 1998, 41 (4) : 357 - 360
  • [6] HALL-EFFECT AND RESISTIVITY IN LIQUID-PHASE-EPITAXIAL LAYERS OF HGCDTE
    LOU, LF
    FRYE, WH
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) : 2253 - 2267
  • [7] PHOTOLUMINESCENCE IN TRANSMUTATION DOPED LIQUID-PHASE-EPITAXIAL GALLIUM-ARSENIDE
    GARRIDO, J
    CASTANO, JL
    PIQUERAS, J
    ALCOBER, V
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2186 - 2190
  • [8] PROPERTIES OF LIQUID-PHASE EPITAXIAL GE-DOPED GAAS
    NEUMANN, H
    JACOBS, K
    VANNAM, N
    KOJ, W
    KRAUSE, C
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (02): : 675 - 678
  • [9] IMPROVED LIQUID-PHASE-EPITAXIAL GROWTH METHOD FOR GAAS-(GA,AL)AS DOUBLE HETEROSTRUCTURES
    AKITA, K
    NISHITANI, Y
    NAKAJIMA, K
    YAMAGUCHI, A
    KUSUNOKI, T
    KOTANI, T
    IMAI, H
    TAKUSAGAWA, M
    RYUZAN, O
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 585 - 587
  • [10] Photoacoustic measurement of transport properties in doped GaAs epitaxial layers
    George, SD
    Radhakrishnan, DSP
    Vallabhan, CPG
    Nampoori, VPN
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 195 (02): : 416 - 421
12345