GROWTH OF IRON-DOPED EPITAXIAL LAYERS FOR GAAS FIELD-EFFECT TRANSISTORS

被引：14

|

作者：

NAKAI, K ^{[1
]}

KITAHARA, K ^{[1
]}

SHIBATOMI, A ^{[1
]}

OHKAWA, S ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KAWASAKI 211,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 10期

关键词：

D O I：

10.1149/1.2133125

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1635 / 1640

页数：6

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