GaAs Epitaxial Growth for Field Effect Transistors.

A survey of the characteristic properties of the material used for field effect transistor (FET) is presented. The main available methods - vapor phase, liquid phase and molecular beam epitaxy - are comparatively discussed. The vapor phase growth and more specifically the arsenic trichloride method with liquid gallium source (AsCl//3/Ga/H//2 method) is described. It is shown that this technique is well suited to the growth of FET structures and can be easily industrialized.