GaAs Epitaxial Growth for Field Effect Transistors.

被引：0
|
作者：
Chane, Jean Paul
Hallais, Jean
机构：
来源：
Acta electronica Paris | 1980年 / 23卷 / 01期
关键词：
TRANSISTORS; FIELD EFFECT;
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暂无
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学科分类号：
摘要：
A survey of the characteristic properties of the material used for field effect transistor (FET) is presented. The main available methods - vapor phase, liquid phase and molecular beam epitaxy - are comparatively discussed. The vapor phase growth and more specifically the arsenic trichloride method with liquid gallium source (AsCl//3/Ga/H//2 method) is described. It is shown that this technique is well suited to the growth of FET structures and can be easily industrialized.
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页码：11 / 21
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