HALL EFFECT AND RESISTIVITY IN LIQUID-PHASE-EPITAXIAL LAYERS OF HgCdTe.

被引：0

作者：

Lou, L.F. ^{[1
]}

Fye, W.H. ^{[1
]}

机构：

[1] Santa Barbara Research Center, Goleta, CA 93117, United States

来源：

Journal of Applied Physics | 1984年 / 56卷 / 08期

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摘要：

引用

页码：2253 / 2267

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[1] HALL-EFFECT AND RESISTIVITY IN LIQUID-PHASE-EPITAXIAL LAYERS OF HGCDTE
LOU, LF
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) : 2253 - 2267
[2] GROWTH OF UNIFORM EPITAXIAL LAYERS BY LIQUID-PHASE-EPITAXIAL METHOD
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[3] ANOMALOUS HALL-EFFECT IN P-TYPE HG1-XCDXTE LIQUID-PHASE-EPITAXIAL LAYERS
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SHER, A
EGER, D
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 1861 - 1868
[4] LIQUID-PHASE GROWTH OF HGCDTE EPITAXIAL LAYERS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 175 - 179
[5] BE DOPING OF LIQUID-PHASE-EPITAXIAL INP
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[6] SURFACE MORPHOLOGY OF LIQUID-PHASE-EPITAXIAL INP
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[J]. ELECTRONICS LETTERS, 1975, 11 (14) : 303 - 304
[7] IRON-DOPED LIQUID-PHASE-EPITAXIAL GAAS LAYERS WITH NEGATIVE-RESISTANCE PROPERTIES
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (07) : 1251 - 1253
[8] OPTICAL AND ELECTRICAL CHARACTERIZATION OF HIGH-RESISTIVITY LIQUID-PHASE-EPITAXIAL IN0.53GA0.47AS-FE
CHEN, Z
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BIMBERG, D
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4574 - 4579
[9] PHOTOLUMINESCENCE IN TRANSMUTATION DOPED LIQUID-PHASE-EPITAXIAL GALLIUM-ARSENIDE
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 2186 - 2190
[10] Evaluation of Composition Reproducibility of HgCdTe Epitaxial Layers Grown in Novel Liquid Phase Epitaxy Apparatus
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (05)

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