HALL EFFECT AND RESISTIVITY IN LIQUID-PHASE-EPITAXIAL LAYERS OF HgCdTe.

被引：0
|
作者：
Lou, L.F. [1 ]
Fye, W.H. [1 ]
机构：
[1] Santa Barbara Research Center, Goleta, CA 93117, United States
来源：
Journal of Applied Physics | 1984年 / 56卷 / 08期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2253 / 2267
相关论文
共 50 条
  • [11] LIQUID PHASE EPITAXIAL GROWTH OF HIGH RESISTIVITY GaAs LAYERS BY IMPURITY DOPING.
    Kojima, Kiyoaki
    Hasegawa, Hideki
    [J]. Electronics & communications in Japan, 1980, 63 (11): : 109 - 117
  • [12] Resistivity size effect in epitaxial iridium layers
    Jog, Atharv
    Gall, Daniel
    [J]. JOURNAL OF APPLIED PHYSICS, 2021, 130 (11)
  • [13] RESISTIVITY + HALL EFFECT IN LIQUID METALS
    SPRINGER, B
    [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (1A): : A115 - &
  • [14] AN INADVERTENT MID-GAP ELECTRON LEVEL IN LIQUID-PHASE-EPITAXIAL GAP
    IQBAL, MZ
    JABBAR, A
    BABER, N
    ZAFAR, N
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 99 (01): : K65 - K68
  • [15] CATION VACANCY FORMATION ENERGIES IN LIQUID-PHASE-EPITAXIAL HG1-XCDXTE
    SHIN, SH
    KHOSHNEVISAN, M
    MORGANPOND, C
    RAGHAVAN, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1470 - 1473
  • [16] Resistivity size effect in epitaxial Ru(0001) layers
    Milosevic, Erik
    Kerdsongpanya, Sit
    Zangiabadi, Amirali
    Barmak, Katayun
    Coffey, Kevin R.
    Gall, Daniel
    [J]. JOURNAL OF APPLIED PHYSICS, 2018, 124 (16)
  • [17] INHOMOGENEITY OF LIQUID-PHASE-EPITAXIAL INGAASP LATTICE MATCHED ON INP - EFFECTS OF TRANSIENT GROWTH
    BRUNEMEIER, PE
    ROTH, TJ
    HOLONYAK, N
    STILLMAN, GE
    [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1707 - 1716
  • [18] INHOMOGENEITY OF LIQUID-PHASE-EPITAXIAL InGaAsP LATTICE MATCHED ON InP: EFFECTS OF TRANSIENT GROWTH.
    Brunemeier, P.E.
    Roth, T.J.
    Holonyak Jr., N.
    Stillman, G.E.
    [J]. 1707, (56):
  • [19] Liquid phase epitaxial growth of HgCdTe using a modified horizontal slider
    Radhakrishnan, JK
    Sitharaman, S
    Gupta, SC
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 252 (1-3) : 79 - 86
  • [20] Resistivity size effect in epitaxial VNi2 layers
    Zhang, Minghua
    Gall, Daniel
    [J]. JOURNAL OF APPLIED PHYSICS, 2023, 134 (10)
12345